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參數資料
| 型號： | IS64C1024AL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K的× 8高速CMOS靜態RAM |
| 文件頁數： | 1/17頁 |
| 文件大小： | 110K |
| 代理商： | IS64C1024AL |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
01/24/05
1
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS61C1024AL
IS64C1024AL
128K x 8 HIGH-SPEED CMOS STATIC RAM
DESCRIPTION
The
ISSI
IS61C1024AL/IS64C1024AL is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using ISSIs high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs,
CE1
and CE2. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory.
The IS61C1024AL/IS64C1024AL is available in 32-pin 300-
mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20),
and 32-pin sTSOP (Type I, 8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE1
CE2
OE
WE
128K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
FEATURES
High-speed access time: 12, 15 ns
Low active power: 160 mW (typical)
Low standby power: 1000 μW (typical) CMOS
standby
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (±10%) power supply
Commercial, industrial, and automotive tempera-
ture ranges available
Lead free available
JANUARY 2005
相關PDF資料 |
PDF描述 |
|---|---|
| IS64C1024AL-15KA3 | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS64C1024AL-15TA3 | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024 | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-12H | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024-12HI | RES POWER .020 OHM 2W 5% SMT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS64C1024AL-15KA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS64C1024AL-15TA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS64C25616AL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64C25616AL-12CTLA3 | 功能描述:靜態隨機存取存儲器 4M (256Kx16) 12ns Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64C25616AL-12CTLA3-TR | 功能描述:靜態隨機存取存儲器 4M (256Kx16) 12ns Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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