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參數資料
| 型號： | IS64LV25616AL-12BA2 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 12 ns, PBGA48 |
| 封裝： | 8 X 10 MM, MINI, BGA-48 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 131K |
| 代理商： | IS64LV25616AL-12BA2 |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
1
IS64LV25616AL
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
High-speed access time: 10, 12 ns
CMOS low power operation
Low stand-by power:
Less than 5 m
A
(typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Temperature Offerings:
Option A1: –40
o
C to +85
o
C
Option A2: –40
o
C to +105
o
C
Option A3: –40
o
C to +125
o
C
Lead-free available
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS64LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS64LV25616AL is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
UB
LB
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
JULY 2006
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| IS64LV25616AL-12BA3 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12BLA3 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12TA2 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12TA3 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12TLA2 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS64LV25616AL-12BA3 | 功能描述:靜態隨機存取存儲器 4M (256Kx16) 12ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12BA3-TR | 功能描述:靜態隨機存取存儲器 4M (256Kx16) 12ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12BLA3 | 功能描述:靜態隨機存取存儲器 4M (256Kx16) 12ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12BLA3-TR | 功能描述:靜態隨機存取存儲器 4M (256Kx16) 12ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12TA2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
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