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參數資料
| 型號： | IS64WV102416BLL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 100萬× 16 HIGH-SPEED異步的CMOS靜態RAM為3.3V電源 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 134K |
| 代理商： | IS64WV102416BLL |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/13/06
1
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
1M x 16 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
APRIL 2006
FEATURES
High-speed access times:
8, 10, 20 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for greater
noise immunity
Easy memory expansion with
CE
and
OE
op-
tions
CE
power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single power supply
V
DD
1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for V
DD
1.65V to 2.2V
V
DD
2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for V
DD
2.4V to 3.6V
speed = 8ns for V
DD
3.3V + 5%
Packages available:
–
48-ball miniBGA (9mm x 11mm
)
– 48-pin TSOP (Type I)
Industrial and Automotive Temperature Support
Lead-free available
Data control for upper and lower bytes
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The
ISSI
IS61WV102416ALL/BLL and IS64WV102416BLL
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using
ISSI
's high-perform-
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-perfor-
mance and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The device is packaged in the JEDEC standard 48-pin
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
A0-A1
9
CE
OE
WE
UB
LB
1024K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
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| IS64WV102416BLL-10MA3 | 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64WV102416BLL-10TA3 | 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64WV12816BLL | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS64WV102416BLL-10CTLA3 | 功能描述:靜態隨機存取存儲器 16M (1Mx16) 10ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV102416BLL10CTLA3TR | 制造商:Integrated Silicon Solution Inc 功能描述:16MB,HIGH-SPEED-AUTOMOTIVE,ASY |
| IS64WV102416BLL-10CTLA3-TR | 功能描述:靜態隨機存取存儲器 16M (1Mx16) 10ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV102416BLL-10MA3 | 功能描述:靜態隨機存取存儲器 16M (1Mx16) 10ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV102416BLL-10MA3-TR | 功能描述:靜態隨機存取存儲器 16M (1Mx16) 10ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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