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參數資料
| 型號： | IS64WV3216BLL-15TLA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-44 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 104K |
| 代理商： | IS64WV3216BLL-15TLA3 |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
1
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS64WV3216BLL
IS61WV3216BLL
FUNCTIONAL BLOCK DIAGRAM
32K x 16 HIGH-SPEED CMOS STATIC RAM
NOVEMBER 2005
FEATURES
High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V-3.6V
CMOS low power operation:
50 mW (typical) operating
25 μW (typical) standby
TTL compatible interface levels
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Automotive Temperature Available
Lead-free available
DESCRIPTION
The
ISSI
IS61/64WV3216BLL is a high-speed, 524,288-bit
static RAM organized as 32,768 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with inno-
vative circuit design techniques, yields access times as
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low
power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS61/64WV3216BLL is packaged in the JEDEC stan-
dard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).
A0-A14
CE
OE
WE
UB
LB
32K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關PDF資料 |
PDF描述 |
|---|---|
| IS64WV6416BLL | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV6416BLL-15BA3 | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV6416BLL-15BLA3 | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV6416BLL-15TA3 | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV6416BLL-15TLA3 | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS64WV3216DBLL/DBLS | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| IS64WV51216BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64WV51216BLL-10CTA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64WV51216BLL-10CTLA3 | 功能描述:靜態隨機存取存儲器 8M (512Kx16) 10ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV51216BLL-10CTLA3-TR | 功能描述:靜態隨機存取存儲器 8M (512Kx16) 10ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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