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參數資料
| 型號： | IS93C46B-3GRI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
| 中文描述： | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.150 INCH, SOIC-8 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 77K |
| 代理商： | IS93C46B-3GRI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/23/03
1
IS93C46B
ISSI
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
1,024-BIT SERIAL ELECTRICALLY
ERASABLE PROM
JULY 2003
FUNCTIONAL BLOCK DIAGRAM
CS
SK
D
IN
D
OUT
DUMMY
BIT
R/W
AMPS
DATA
REGISTER
ADDRESS
REGISTER
ADDRESS
DECODER
WRITE
ENABLE
HIGH VOLTAGE
GENERATOR
INSTRUCTION
DECODE,
CONTROL,
AND
CLOCK
GENERATION
EEPROM
ARRAY
64x16
INSTRUCTION
REGISTER
FEATURES
Industry-standard Microwire Interface
— Non-volatile data storage
— Low voltage operation:
Vcc = 2.5V to 5.5V
— Full TTL compatible inputs and outputs
— Auto increment for efficient data dump
x16 bit organization
Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
Enhanced low voltage CMOS E
2
PROM
technology
Versatile, easy-to-use Interface
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Chip select enables power savings
Durable and reliable
— 40-year data retention after 1M write cycles
— 1 million write cycles
— Unlimited read cycles
— Schmitt-trigger inputs
Industrial and Automotive Temperature Grade
DESCRIPTION
The IS93C46B is a low-cost 1kb non-volatile,
ISSI
serial EEPROM. It is fabricated using an
enhanced CMOS design and process. The
IS93C46B contains power-efficient read/write
memory, and organization of 64 words of 16 bits.
The IS93C46B is fully backward compatible with
IS93C46.
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the device is write-enabled. A
selected x16 word can be modified with a single
WRITE or ERASE instruction. Additionally, the
two instructions WRITE ALL or ERASE ALL can
program the entire array. Once a device begins
its self-timed program procedure, the data out pin
(Dout) can indicate the READY/
BUSY
status by
raising chip select (CS). The self-timed write cycle
includes an automatic erase-before-write
capability. The device can output any number of
consecutive words using a single READ
instruction.
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| IS93C46B | 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
| IS93C46B-3G | 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
| IS93C46B-3GI | 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
| IS93C46B-3GR | 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS93C46B-3GRI-TR | 功能描述:電可擦除可編程只讀存儲器 2.5V 1Kb Industrial Temp RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| IS93C46B-3P | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
| IS93C46B-3PA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
| IS93C46B-3PI | 功能描述:電可擦除可編程只讀存儲器 2.5V 1Kb Industrial Temp RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| IS93C46B-3Z | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
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