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參數(shù)資料
| 型號： | ISL6605IRZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Synchronous Rectified MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220VEEC, QFN-8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 302K |
| 代理商： | ISL6605IRZ |
1
FN9091.5
ISL6605
Synchronous Rectified MOSFET Driver
The ISL6605 is a high frequency, MOSFET driver optimized
to drive two N-Channel power MOSFETs in a synchronous-
rectified buck converter topology. This driver combined with
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM
controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and
minimizes low driver switching losses for high MOSFET gate
capacitance and high switching frequency applications. Each
driver is capable of driving a 3000pF load with an 8ns
propagation delay and less than 10ns transition time. This
product implements bootstrapping on the upper gate with an
internal bootstrap Schottky diode, reducing implementation
cost, complexity, and allowing the use of higher
performance, cost effective N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
The ISL6605 features 4A typical sink current for the lower
gate driver, which is capable of holding the lower MOSFET
gate during the Phase node rising edge to prevent shoot-
through power loss caused by the high dv/dt of the Phase
node.
The ISL6605 also features a Three-State PWM input that,
working together with Intersil multi-phase PWM controllers,
will prevent a negative transient on the output voltage when
the output is being shut down. This feature eliminates the
Schottky diode that is usually seen in a microprocessor
power system for protecting the microprocessor from
reversed-output-voltage damage.
Features
Drives Two N-Channel MOSFETs
Adaptive Shoot-Through Protection
0.4
On-Resistance and 4A Sink Current Capability
Supports High Switching Frequency
- Fast Output Rise and Fall Time
- Ultra Low Propagation Delay 8ns
Three-State PWM Input for Power Stage Shutdown
Internal Bootstrap Schottky Diode
Low Bias Supply Current (5V, 30μA)
Enable Input
QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
Pb-Free Available (RoHS Compliant)
Applications
Core Voltage Supplies for Intel and AMD
Microprocessors
High Frequency Low Profile DC-DC Converters
High Current Low Voltage DC-DC Converters
Synchronous Rectification for Isolated Power Supplies
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Pinouts
UGATE
BOOT
PWM
GND
1
2
3
4
8
7
6
5
PHASE
EN
VCC
LGATE
TOP VIEW
8 PIN SOIC
BOOT
G
L
U
EN
VCC
PWM
P
7
8
4
3
1
2
6
6
5
TOP VIEW
8 PIN SOIC
Data Sheet
January 4, 2005
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002-2005. All Rights Reserved
Intel is a registered trademark of Intel Corporation.
AMD is a registered trademark of Advanced Micro Devices, Inc.
All other trademarks mentioned are the property of their respective owners.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6605IRZA | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| ISL6605IRZA-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| ISL6605IRZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:6,000 系列:* |
| ISL6608CB | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ISL6608CB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
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