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參數資料
| 型號： | ISL6608CRZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Synchronous Rectified MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, LEAD FREE, PLASTIC, MO-220VEEC, QFN-8 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 332K |
| 代理商： | ISL6608CRZ |
1
ISL6608
Synchronous Rectified MOSFET Driver
with Pre-Biased Load Startup Capability
The ISL6608 is a high frequency, MOSFET driver optimized
to drive two N-Channel power MOSFETs in a synchronous-
rectified buck converter topology. This driver combined with
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM
controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and
minimizes gate drive losses due to MOSFET gate charge at
high switching frequency applications. Each driver is capable
of driving a 3000pF load with a low propagation delay and
less than 10ns transition time. This product implements
bootstrapping on the upper gate with an internal bootstrap
Schottky diode, reducing implementation cost, complexity,
and allowing the use of higher performance, cost effective
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
The ISL6608 features 4A sink current for the lower gate
driver, which is capable of holding the lower MOSFET gate
during the Phase node rising edge to prevent shoot-through
power loss caused by the high dv/dt of the Phase node.
The ISL6608 also features a Three-State PWM input which,
working together with Intersil multi-phase PWM controllers,
will prevent a negative transient on the output voltage when
the output is shut down. This feature eliminates the Schottky
diode that is usually seen in a microprocessor power system
for protecting the microprocessor from reversed output
voltage events.
A diode emulation feature is integrated in the ISL6608 to
enhance converter efficiency at light load conditions. Diode
emulation also prevents a negative transient when starting
up with a pre-biased voltage on the output. When diode
emulation is enabled, the driver allows discontinuous
conduction mode by detecting when the inductor current
reaches zero and subsequently turns off the low side
MOSFET, which prevents the output from sinking current
and producing a negative transient on a pre-biased output
(see Figures 6 and 7 on page 7).
Features
Dual MOSFET Drives for Synchronous Rectified Bridge
Adaptive Shoot-Through Protection
0.5
On-Resistance and 4A Sink Current Capability
Supports High Switching Frequency up to 2MHz
- Fast Output Rise/Fall Time and Low Propagation Delay
Three-State PWM Input for Power Stage Shutdown
Internal Bootstrap Schottky Diode
Low Bias Supply Current (5V, 80μA)
Diode Emulation for Enhanced Light Load Efficiency and
Pre-Biased Startup Applications
VCC POR (Power-On-Reset) Feature Integrated
Low Three-State Shutdown Holdoff Time (Typically 160ns)
Pin-to-Pin Compatible with ISL6605
QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
Pb-free Available as an Option
Applications
Core Voltage Supplies for FPGAs and PowerPC
Microprocessors
Point-Of-Load Modules with Pre-Biased Start-Up
Requirements
High Frequency and High Current DC-DC Converters
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices”
Data Sheet
March 2004
FN9140.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
相關PDF資料 |
PDF描述 |
|---|---|
| ISL6608CRZ-T | Synchronous Rectified MOSFET Driver |
| ISL6608IB | Synchronous Rectified MOSFET Driver |
| ISL6608IR | Synchronous Rectified MOSFET Driver |
| ISL6608CR-T | Synchronous Rectified MOSFET Driver |
| ISL6608IB-T | Synchronous Rectified MOSFET Driver |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ISL6608CRZ-T | 功能描述:功率驅動器IC VER OF ISL6608CR-T RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608IB | 功能描述:功率驅動器IC MOSFET DUAL SYNC RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608IB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| ISL6608IBZ | 功能描述:功率驅動器IC VER OF ISL6608IB W/-40TO+100 TEMP RNG RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608IBZ-T | 功能描述:功率驅動器IC VER OF ISL6608CB-T W/-40 TO +100 TEMP RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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