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參數資料
| 型號： | ITF86174SQT |
| 廠商： | Intersil Corporation |
| 英文描述： | 8360 TBGA C ENCRP |
| 中文描述： | 第9A，30V的，0.016歐姆，P溝道，邏輯層次，功率MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大小： | 198K |
| 代理商： | ITF86174SQT |
1
File Number
4799.3
ITF86174SQT
9A, 30V, 0.016 Ohm, P-Channel, Logic
Level, Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.016
,
V
GS
=
10V
- r
DS(ON)
= 0.024
,
V
GS
=
4.5V
- r
DS(ON)
= 0.027
,
V
GS
=
4V
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
TSSOP-8
4
1
23
5
SOURCE(2)
DRAIN(8)
DRAIN(1)
SOURCE(7)
SOURCE(6)
DRAIN(5)
SOURCE(3)
GATE(4)
PART NUMBER
PACKAGE
BRAND
ITF86174SQT
TSSOP-8
86174
NOTE: When ordering, use the entire part number. ITF86174SQT2
is available only in tape and reel.
ITF86174SQT
-30
-30
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 62.5
o
C/W measured using FR-4 board with 1.0in
2
(645.2mm
2
) copper pad at 10s.
9.0
7.0
4.5
4.0
Figure 4
2.0
16
-55 to 150
A
A
A
A
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
March 2000
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy Inc.
|
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
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