- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383188 > IXDN414YM (IXYS CORP) 14 Ampere Low-Side Ultrafast MOSFET Drivers PDF資料下載
參數(shù)資料
| 型號： | IXDN414YM |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 Ampere Low-Side Ultrafast MOSFET Drivers |
| 中文描述： | 14 A BUF OR INV BASED MOSFET DRIVER, PSSO5 |
| 封裝： | TO-263, D2PAK-5 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 241K |
| 代理商： | IXDN414YM |
Features
Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
Latch-Up Protected Over Entire
Operating Range
High Peak Output Current: 14A Peak
Wide Operating Range: 4.5V to 25V
High Capacitive Load
Drive Capability: 15nF in <30ns
Matched Rise And Fall Times
Low Propagation Delay Time
Low Output Impedance
Low Supply Current
Applications
Driving MOSFETs and IGBTs
Motor Controls
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Class D Switching Amplifiers
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
14 Ampere Low-Side Ultrafast MOSFET Drivers
First Release
Copyright IXYS CORPORATION 2001
General Description
The IXDI414/IXDN414 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and IGBTs
to their minimum switching time and maximum practical
frequency limits. The IXDI/N414 can source and sink 14A of
peak current while producing voltage rise and fall times of less
than 30ns to drive the latest IXYS MOSFETs & IGBTs. The
input of the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range. Designed
with small internal delays, a patent-pending circuit virtually
eliminates transistor cross conduction and current shoot-
through. Improved speed and drive capabilities are further
enhanced by very low, matched rise and fall times.
The IXDN414 is configured as a non-inverting gate driver and
the IXDI414 is an inverting gate driver.
The IXDN414/IXDI414 family are available in standard 8 pin
P-DIP (PI), 5-pin TO-220 (CI, CM) and TO-263 (YI, YM)
surface-mount packages.
Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram
* Patent Pending
N
P
OUT
Vcc
IN
ANTI-CROSS
CONDUCTION
CIRCUIT *
GND
GND
Vcc
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXDN50N120AU1 | High Voltage IGBT with Diode(Short Circuit SOA Capability) |
| IXDN55N120 | High Voltage IGBT with optional Diode |
| IXDN55N120D1 | High Voltage IGBT with optional Diode |
| IXDN75N120 | High Voltage IGBT |
| IXDP610 | Bus Compatible Digital PWM Controller, IXDP 610 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXDN430 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:30 Amp Low-Side Ultrafast MOSFET / IGBT Driver |
| IXDN430CI | 功能描述:功率驅(qū)動器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXDN430MCI | 功能描述:功率驅(qū)動器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXDN430MYI | 功能描述:功率驅(qū)動器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXDN430YI | 功能描述:功率驅(qū)動器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。