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參數資料
| 型號： | IXFH76N06-11 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 76 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 80K |
| 代理商： | IXFH76N06-11 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25 C to 175 C
N06
N07
N06
N07
60
70
60
70
20
30
76
76
304
100
30
V
V
V
V
V
V
A
A
A
A
mJ
J
V/ns
V
DGR
T
J
= 25 C to 175 C; R
GS
= 10 k
V
GS
V
GSM
I
D25
I
D119
I
DM
I
AR
E
AR
E
AS
dv/dt
Continuous
Transient
T
C
= 25 C (Chip capability = 125 A)
T
C
= 119 C, limited by external leads
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
2
5
I
S
T
J
150 C, R
G
= 2
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
360
W
C
C
C
C
-55 ... +175
175
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.15/10
Nm/lb.in.
6
g
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
HiPerFET
TM
Power MOSFETs
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 A
N06
N07
60
70
2.0
V
V
V
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 40 A
3.4
100
nA
T
J
= 25 C
T
J
= 125 C
76
N06/N07-11
76
N06/N07-12
100
500
A
A
R
DS(on)
11
12
m
m
Pulse test, t 300 s, duty cycle d 2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Features
G
International standard package
JEDEC TO-247 AD
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Unclamped Inductive Switching (UIS)
rated
G
Low package inductance
- easy to drive and to protect
G
Fast intrinsic Rectifier
Applications
G
DC-DC converters
G
Synchronous rectification
G
Battery chargers
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
G
Temperature and lighting controls
G
Low voltage relays
Advantages
G
Easy to mount with 1 screw
(isolated mounting screw hole)
G
Space savings
G
High power density
92785H (12/98)
(TAB)
V
DSS
60 V
60 V
70 V
70 V
I
D25
76 A
76 A
76 A
76 A
R
DS(on)
11 m
12 m
11 m
12 m
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFH76N06-12 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFH76N07-11 | 功能描述:MOSFET 70V 76A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH76N07-11 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXFH76N07-12 | 功能描述:MOSFET 70V 76A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH7N80 | 功能描述:MOSFET 7 Amps 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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