- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383191 > IXFH80N10Q (IXYS CORP) N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓100V,導(dǎo)通電阻15mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | IXFH80N10Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓100V,導(dǎo)通電阻15mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 80 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | IXFH80N10Q |
1 - 2
2000 IXYS All rights reserved
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
Test Conditions
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
Maximum Ratings
100
100
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
80
320
80
A
A
A
30
1.5
mJ
J
dv/dt
I
S
T
J
T
C
= 25 C
I
DM
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
360
W
C
C
C
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
98592B (7/00)
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
=
Test Conditions
Characteristic Values
Min. Typ.
Max.
A
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
25
A
1
mA
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
15
m
TO-268 (IXFT) Case Style
G
S
HiPerFET
TM
Power MOSFETs
Q-Class
Features
IXYS advanced low gate charge
process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
IXFH 80N10Q
IXFT 80N10Q
V
DSS
I
D25
R
DS(on)
= 100 V
= 80 A
= 15 m
t
rr
200ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
IXYS reserves the right to change limits, test conditions, and dimensions.
(TAB)
(TAB)
Preliminary data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFH80N20Q | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻28mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| IXFK80N20Q | HiPerFET Power MOSFETs Q-Class |
| IXFT80N20Q | HiPerFET Power MOSFETs Q-Class |
| IXFH90N20Q | HiPerFETTM Power MOSFETs Q-CLASS |
| IXFK90N20Q | HiPerFETTM Power MOSFETs Q-CLASS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFH80N15Q | 功能描述:MOSFET 80 Amps 150V 0.0225 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH80N20Q | 功能描述:MOSFET 200V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH80N30P3 | 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH86N30T | 功能描述:MOSFET Trench HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH88N20Q | 功能描述:MOSFET 88 Amps 200V 0.03 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。