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參數資料
| 型號： | IXFK110N06 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 110 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 156K |
| 代理商： | IXFK110N06 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25 C to 150 C
N07
N06
N07
N06
70
60
70
60
V
V
V
V
V
DGR
T
J
= 25 C to 150 C; R
GS
= 1 M
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
D130
I
DM
I
AR
T
C
= 25 C, die capability
T
C
= 130 C, limited by external leads
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
110
76
A
A
A
A
600
100
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
30
2
mJ
J
dv/dt
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
500
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
Terminal connection torque
0.9/6
Nm/lb.in.
Nm/lb.in.
-
Weight
10
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
N06
N07
60
70
V
V
V
V
GS (th)
I
GSS
I
DSS
V
DS
V
GS
V
DS
V
GS
V
Note 2
= V
GS
, I
D
= 8 mA
= 20 V
DC
, V
DS
= 0
= 0.8 V
DSS
= 0 V
2
4
200
nA
T
J
= 25 C
T
J
= 125 C
110N06/110N07
105N07
400
A
2
mA
R
DS(on)
= 10 V, I
D
= 0.5 I
D25
6 m
7 m
TO-264 AA (IXFK)
S
G
D
Features
International standard packages
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
92802I (10/97)
(TAB)
V
DSS
60 V
70 V
70 V
t
rr
250 ns
I
D25
110 A
105 A
110 A
R
DS(on)
6 m
7 m
6 m
IXFK 110 N06
IXFK 105 N07
IXFK 110 N07
IXYS reserves the right to change limits, test conditions, and dimensions.
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PDF描述 |
|---|---|
| IXFK110N07 | HiPerFET Power MOSFETs |
| IXFK105N07 | HiPerFET Power MOSFETs |
| IXFK150N15 | HiPerFET Power MOSFETs |
| IXFX150N15 | HiPerFET Power MOSFETs |
| IXFK15N100Q | HiPerFET Power MOSFETs Q-Class |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFK110N07 | 功能描述:MOSFET 70V 110A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK110N20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 110A I(D) | TO-264AA |
| IXFK120N20 | 功能描述:MOSFET 200V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK120N20P | 功能描述:MOSFET 120 Amps 200V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK120N25 | 功能描述:MOSFET 120 Amps 250V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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