- 您現在的位置：買賣IC網 > PDF目錄383193 > IXFN120N20 (IXYS CORP) CAP 8200PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 PDF資料下載
參數資料
| 型號： | IXFN120N20 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | CAP 8200PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| 中文描述： | 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, MINIBLOC-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 69K |
| 代理商： | IXFN120N20 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
200
200
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
120
480
120
64
A
A
A
mJ
3
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
600
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
-
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
200
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
2
4 V
200 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
17 m
R
DS(on)
96538C (7/99)
IXFN 120N20
V
DSS
I
D25
R
DS(on)
=
= 200 V
= 120 A
17 m
t
rr
250 ns
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Encapsulating epoxy meets
UL 94 V-0, flammability classification
International standard package
miniBLOC,
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料 |
PDF描述 |
|---|---|
| IXFN130N30 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導通電阻18mΩ的N溝道增強型HiPerFET功率MOSFET) |
| IXFN150N15 | HiPerFET Power MOSFET |
| IXFN150N10 | HiPerFET Power MOSFETs |
| IXFN180N07 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓70V,導通電阻7mΩ的N溝道增強型HiPerFET功率MOSFET) |
| IXFN200N06 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓60V,導通電阻6mΩ的N溝道增強型HiPerFET功率MOSFET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN120N20 | 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B |
| IXFN120N25 | 功能描述:MOSFET 120 Amps 250V 0.02 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN130N30 | 功能描述:MOSFET 300V 130A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN132N50P3 | 功能描述:MOSFET 500V 112A 0.039Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN140N20P | 功能描述:MOSFET 140 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。