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參數資料
| 型號： | IXFN24N100 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerRF Power MOSFETs |
| 中文描述： | 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, MINIBLOC-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 105K |
| 代理商： | IXFN24N100 |
2002 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
1000
V
3.0
5.5
V
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
3
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.39
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
V
1000
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
24
A
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
96
A
24
A
T
C
= 25
°
C
60
mJ
T
C
= 25
°
C
3.0
J
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
T
C
= 25
°
C
600
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
J
V
ISOL
1.6 mm (0.63 in) from case for 10 s
-
°
C
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
98875 (1/02)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 24N100F
V
DSS
I
D25
R
DS(on)
= 0.39
=
=
1000 V
24 A
t
rr
≤
250 ns
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast ntrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Easy to mount
Space savings
High power density
Advance Technical Information
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| IXFK25N80 | CAP,Polypropylene,60uF,10-% Tol,10+% Tol |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN24N100_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET |
| IXFN24N100F | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN24N90Q | 功能描述:MOSFET 24 Amps 900V 0.45W Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN25N80 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs |
| IXFN25N90 | 功能描述:MOSFET 25 Amps 900V 0.33 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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