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參數(shù)資料
| 型號(hào)： | IXFN38N100Q2 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr |
| 中文描述： | 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC, 4 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 565K |
| 代理商： | IXFN38N100Q2 |
2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
1000
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= ±30 V, V
DS
= 0
2.5
5.0 V
±200 nA
I
DSS
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25°C
T
J
= 125°C
50 mA
3 mA
R
DS(on)
0.25
DS99027A(06/03)
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
Low Intrinsic R
g
High dV
/
dt, Low t
rr
IXFN38N100Q2
V
DSS
= 1000 V
I
D25
= 38 A
R
DS(on)
= 0.25
t
rr
≤
300 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±30
±40
V
V
I
D25
I
DM
I
AR
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
38
A
A
A
152
38
E
AR
E
AS
dv/dt
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
, di/dt
≤
100 A
/μ
s, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
T
C
= 25°C
60
5.0
mJ
J
20
V/ns
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
890
W
-55 ... +150
°C
150
°C
°C
-55 ... +150
50/60 Hz, RMS, t = 1 minute
2500
V
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Double metal process for low
gate resistance
miniBLOC,
with Aluminium nitride
isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generators
Advantages
Easy to mount
Space savings
High power density
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