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參數(shù)資料
| 型號： | IXFN44N50Q |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs Q-Class |
| 中文描述： | 44 A, 500 V, 120 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, MINIBLOC-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 80K |
| 代理商： | IXFN44N50Q |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
44N50
48N50
44N50
48N50
44
48
176
192
48
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
E
AS
T
C
= 25 C
60
2.5
mJ
mJ
dv/dt
I
S
T
J
150 C, R
G
= 2
I
, di/dt 100 A/ s, V
DD
V
DSS
,
5
V/ns
P
D
T
C
= 25 C
500
W
T
J
T
JM
T
stg
V
ISOL
-55 to +150
150
-55 to +150
C
C
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
500
2.0
V
V
4.0
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
100
A
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
44N50
48N50
120
100
m
m
Pulse test, t 300 s, duty cycle d 2 %
HiPerFET
TM
Power MOSFETs
Q-Class
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
Unclamped Inductive Switching (UIS)
rated
Low R
DS (on)
Fast intrinsic diode
International standard package
miniBLOC
with Aluminium nitride
isolation for low thermal resistance
Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
Molding epoxies meet UL 94 V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
DSS
500 V 44 A 120 m
500 V 48 A 100 m
I
D25
R
DS(on)
IXFN 44N50Q
IXFN 48N50Q
t
rr
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
98715 (03/30/00)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFN48N50Q | HiPerFET Power MOSFETs Q-Class |
| IXFN44N50U2 | HiPerFET Power MOSFETs |
| IXFN44N50U3 | HiPerFET Power MOSFETs |
| IXFN48N50U2 | HiPerFET Power MOSFET （Buck & Boost Configurations for PFC & Motor Control Circuits）(最大漏源擊穿電壓800V,導(dǎo)通電阻0.10Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET（步升&步降配置，用于PFC和電機(jī)控制電路）) |
| IXFN48N50U3 | HiPerFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFN44N50Q_03 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-Class |
| IXFN44N50U2 | 功能描述:MOSFET N-CH 500V 44A SOT-227B RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:HiPerFET™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| IXFN44N50U3 | 功能描述:MOSFET N-CH 500V 44A SOT-227B RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:HiPerFET™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| IXFN44N60 | 功能描述:MOSFET 44 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN44N80 | 功能描述:MOSFET 44 Amps 800V 0.145 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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