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參數(shù)資料
| 型號(hào)： | IXFR12N100F |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs ISOPLUS247 |
| 中文描述： | 10 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 91K |
| 代理商： | IXFR12N100F |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
12N100
10N100
12N100
10N100
12N100
10N100
10
A
A
A
A
A
A
9
I
DM
T
C
= 25
°
C, Pulse width limited by T
JM
48
40
12
10
I
AR
T
C
= 25
°
C
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
31
mJ
1
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
C
= 25
°
C
250
W
T
J
T
JM
T
stg
-40 ... +150
°
C
°
C
°
C
150
-40 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
1000
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.5 V
±
100 nA
I
DSS
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= I
T
Notes 1 & 2
T
J
= 25
°
C
T
J
= 125
°
C
12N100
10N100
50
μ
A
1.5 mA
R
DS(on)
1.05
1.2
98934(7/02)
ISOPLUS 247
TM
(IXFR)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
F-Class: MegaHertz Switching
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Features
z
RF capable MOSFETs
z
Double metal process for low gate
resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
13.5 MHz industrial applications
z
Pulse generation
z
Laser drivers
z
RF amplifiers
Advantages
z
ISOPLUS 247
TM
package for clip or
spring mounting
z
Space savings
z
High power density
V
DSS
I
D25
10 A
9 A
R
DS(on)
1.05
1.20
IXFR 12N100F 1000 V
IXFR 10N100F 1000 V
t
rr
≤
250 ns
Isolated back surface*
Preliminary Data Sheet
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFR12N100Q | 功能描述:MOSFET 12 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR12N120P | 功能描述:MOSFET 12 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR13N50 | 功能描述:MOSFET 13 Amps 500V 0.4 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR140N20P | 功能描述:MOSFET 75 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR140N30P | 功能描述:MOSFET 82 Amps 300V 0.026 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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