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參數(shù)資料
| 型號(hào)： | IXFR80N20Q |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 71A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 71A條（丁）|對(duì)247VAR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 35K |
| 代理商： | IXFR80N20Q |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
200
200
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
1.5
71
320
80
A
A
A
45
mJ
J
I
S
T
J
150 C, R
G
= 2
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
310
W
-55 ... +150
150
-55 ... +150
C
C
C
1.6 mm (0.063 in) from case for 10 s 300
C
M
d
Weight
Mounting torque
1.13/10 Nm/lb.in.
5
g
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
,
High dv/dt
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.0
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= I
T
Note 1
T
J
= 25 C
T
J
= 125 C
25
A
1
mA
R
DS(on)
28
m
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
, Q-Class
(Electrically Isolated Back Surface)
98617A (7/00)
G
D
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
IXFR 80N20Q
V
DSS
I
D25
R
DS(on)
= 28m
= 200 V
= 71 A
t
rr
200 ns
ISOPLUS 247
TM
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
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