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參數(shù)資料
| 型號(hào)： | IXFT60N25Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs Q-Class |
| 中文描述： | 60 A, 250 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268 |
| 封裝： | TO-268, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 71K |
| 代理商： | IXFT60N25Q |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
250
250
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
60
A
A
A
240
60
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
45
1.5
mJ
J
dv/dt
I
S
T
J
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
360
W
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
Weight
TO-247
TO-264
TO-268
6
g
g
g
10
4
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Low Gate Charge and Capacitances
Features
Low gate charge
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
250
V
V
2
4
200
nA
T
J
= 25 C
T
J
= 125 C
50
1
A
mA
R
DS(on)
47
m
G = Gate
S = Source
TAB = Drain
98630 (6/99)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
Advanced Technical Information
V
DSS
I
D25
R
DS(on)
= 47m
t
rr
= 250 V
= 60 A
250 ns
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXFT60N50P3 | 功能描述:MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IXFT69N30P | 功能描述:MOSFET 69 Amps 300V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT6N100F | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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