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參數資料
| 型號： | IXFX26N60Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs Q-Class |
| 中文描述： | 26 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, PLUS247-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 103K |
| 代理商： | IXFX26N60Q |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
600
V
V
Continuous
Transient
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
26
A
A
A
104
26
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
45
1.5
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
360
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
M
d
Mounting torque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
TO-264
6
g
g
10
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
Low gate charge
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±
20 V
DC
, V
DS
= 0
600
V
2.5
4.5
V
±
200
nA
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
1
μ
A
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.25
G = Gate
S = Source
D = Drain
TAB = Drain
98919 (05/02)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
I
R
DS(on)
t
rr
≤
250 ns
= 600 V
= 26 A
= 0.25
IXFK 26N60Q
IXFX 26N60Q
PLUS 247
TM
(IXFX)
GD
D (TAB)
Advance Technical Information
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| IXFX26N90 | 功能描述:MOSFET 26 Amps 900V 0.3 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IXFX30N100Q2 | 功能描述:MOSFET 30 Amps 1000V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFX30N110P | 功能描述:MOSFET 30 Amps 1100V 0.3600 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFX30N50Q | 功能描述:MOSFET 30 Amps 500V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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