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參數資料
| 型號： | IXFX34N80 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 34 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLUS247, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 48K |
| 代理商： | IXFX34N80 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
800
800
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
34
136
36
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
64
3
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
560
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
800
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
3.0
5.0 V
200 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
0.24
R
DS(on)
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and ighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
Avalanche Rated
98560B (6/99)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFK 34N80
IXFX 34N80
V
DSS
I
D25
R
DS(on)
= 0.24
= 800 V
=
34 A
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
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