- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383193 > IXFX90N30 (IXYS CORP) HiPerFET Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | IXFX90N30 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 90 A, 300 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLUS247, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 125K |
| 代理商： | IXFX90N30 |
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
300
300
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
D104
I
DM
I
AR
T
C
= 25
°
C (MOSFET chip capability)
T
C
= 104
°
C (External lead capability)
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
90
75
A
A
A
A
360
90
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
64
mJ
3
J
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
560
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
10
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
300
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20 V, V
DS
= 0
2.0
4.0 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
2 mA
33 m
R
DS(on)
Single MOSFET Die
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98537A (12/01)
PLUS 247
TM
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFX 90N30
IXFK 90N30
V
DSS
I
D25
R
DS(on)
=
= 300
=
V
A
90
33 m
t
rr
≤
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
相關PDF資料 |
PDF描述 |
|---|---|
| IXFM11N80 | HiPerFET Power MOSFETs |
| IXFM13N80 | HiPerFET Power MOSFETs |
| IXFM11N100 | HIPERFET Power MOSFTETs |
| IXFM11N60 | HIPERFET Power MOSFTETs |
| IXFM11N90 | HIPERFET Power MOSFTETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXFX94N50P2 | 功能描述:MOSFET PolarP2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFX98N50P3 | 功能描述:MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFY4N60P3 | 功能描述:MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFY5N50P3 | 功能描述:MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFZ11N100 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
發(fā)布緊急采購，3分鐘左右您將得到回復。