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參數(shù)資料
| 型號(hào)： | IXGH12N60CD1 |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | HiPerFASTTM IGBT LightspeedTM Series |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 61K |
| 代理商： | IXGH12N60CD1 |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
24
A
12
A
48
A
V
GE
= 15 V, T
VJ
= 125
°
C, R
G
= 33
Clamped inductive load, L = 300
μ
H
I
CM
= 24
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
T
C
= 25
°
C
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Features
Very high frequency IGBT
New generation HDMOS
TM
process
International standard package
JEDEC TO-247AD
High peak current handling capability
Applications
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Advantages
Fast switching speed
High power density
98623A (2/02)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
GE
= V
GE
600
V
I
C
2.5
5.0
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
1.5
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15 V
2.1
2.7
V
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
HiPerFAST
TM
IGBT
Lightspeed
TM
Series
V
CES
= 600 V
=
24 A
2.7 V
55 ns
I
C25
V
CE(sat)
=
t
fi(typ)
=
IXGH 12N60CD1
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PDF描述 |
|---|---|
| IXGH12N60C | Lightspeed Series HiPerFAST IGBT(Lightspeed系列,VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH12N90C | Lightspeed Series HiPerFAST IGBT(VCES為900V，VCE(sat)為3.0V的HiPerFAST絕緣柵雙極晶體管) |
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| IXGH15N120CD1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH12N90C | 功能描述:IGBT 晶體管 24 Amps 900V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N90C_03 | 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:HiPerFAST IGBT Lightspeed Series |
| IXGH14N170A | 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:High Voltage IGBT |
| IXGH15N120B | 功能描述:IGBT 晶體管 30 Amps 1200V 3.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH15N120B2D1 | 功能描述:IGBT 晶體管 30 Amps 1200V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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