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參數資料
| 型號： | IXGH31N60 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ultra-Low VCE(sat) IGBT |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 55K |
| 代理商： | IXGH31N60 |
1 - 2
2000 IXYS All rights reserved
TO-247 AD
Ultra-Low V
CE(sat)
IGBT
V
CES
I
C25
V
CE(sat)
= 600 V
= 60 A
= 1.7 V
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
60
31
80
A
A
A
I
= 62
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque (M3) TO-247
1.13/10
Nm/lb.in.
300
C
Weight
TO-247
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
100
500
A
A
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.7
V
Features
International standard package
Low V
- for minimum on-state conduction
losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Low losses, high efficiency
High power density
TO-268
(TAB)
G
E
IXGH 31N60
IXGT 31N60
92795G (7/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
(TAB)
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相關代理商/技術參數 |
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| IXGH31N60D1 | 功能描述:IGBT 晶體管 60 Amps 600V 1.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH31N60U1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Ultra-Low VCE(sat) IGBT with Diode |
| IXGH32N100A3 | 功能描述:MOSFET 32 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXGH32N120A3 | 功能描述:IGBT 晶體管 32 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH32N170 | 功能描述:IGBT 晶體管 72 Amps 1700 V 3.3 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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