- 您現在的位置：買賣IC網 > PDF目錄383198 > IXGH39N60B (IXYS CORP) HiPerFAST IGBT PDF資料下載
參數資料
| 型號： | IXGH39N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 76 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 154K |
| 代理商： | IXGH39N60B |
2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 22
Clamped inductive load
76
A
39
A
152
A
SSOA
(RBSOA)
I
= 76
@ 0.8 V
CES
A
P
C
T
C
= 25
°
C
200
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque (M3) TO-247
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
DS97548A(02/03)
HiPerFAST
TM
IGBT
IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 76 A
= 1.7 V
= 200 ns
Features
z
International standard packages
JEDEC TO-247 AD & TO-268
z
High current handling capability
z
Newest generation HDMOS
TM
process
z
MOS Gate turn-on
- drive simplicity
Applications
z
PFC circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Very fast switching speeds for high
frequency applications
Preliminary data
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
BV
CES
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 750
μ
A
39N60B
39N60BD1
600
600
V
V
GE(th)
I
C
I
C
= 250
μ
A, V
CE
= V
GE
= 500
μ
A
39N60B
39N60BD1
2.5
2.5
5.0
5.0
V
V
I
CES
V
CE
=
0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 125
°
C
39N60B
39N60B
39N60BD1
200
1
3
μ
A
mA
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
=
I
90
,
V
GE
= 15 V
1.7
V
(D1)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
C (TAB)
G
E
C (TAB)
TO-268
(IXGT)
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH39N60BD1 | HiPerFAST IGBT |
| IXGH40N30 | HiPerFAST IGBT |
| IXGH40N30A | HiPerFAST IGBT |
| IXGH40N30AS | HiPerFAST IGBT |
| IXGH40N30B | HiPerFAST IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGH39N60BD1 | 功能描述:IGBT 晶體管 76 Amps 600V 1.8 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH39N60BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | TO-247SMD |
| IXGH40N120A2 | 功能描述:IGBT 晶體管 SGL IGBT 1200V, 80A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH40N120B2D1 | 功能描述:IGBT 晶體管 IGBT, Diode 1200V, 75A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH40N120C3 | 功能描述:IGBT 晶體管 75Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。