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參數資料
| 型號： | IXGK60N60C2D1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFASTTM IGBT with Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 627K |
| 代理商： | IXGK60N60C2D1 |
2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
V
GE(th)
I
C
= 250
μ
A, V
CE
= V
GE
3.0
5.0
V
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
650
5
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
Note 1
= 50 A, V
GE
= 15 V
T
J
= 25
°
C
T
J
= 125
°
C
2.1
1.8
2.5
V
V
HiPerFAST
TM
IGBT with Diode
C2-Class High Speed IGBTs
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25
°
C to 150
°
C
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
V
GES
V
GEM
Continuous
Transient
±
20
±
30
V
V
I
C25
I
C110
I
CM
T
C
T
C
T
C
= 25
°
C (limited by leads)
= 110
°
C
= 25
°
C, 1 ms
75
60
A
A
A
300
SSOA
(RBSOA)
V
GE
= 15 V, T
VJ
= 125
°
C, R
G
= 10
Clamped inductive load @ V
CE
≤
600 V
I
CM
= 100
A
P
C
T
C
= 25
°
C
480
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
M
d
Mounting torque, TO-264
1.13/10 Nm/lb.in.
Weight
TO-264
PLUS247
10
g
g
6
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Very high frequency IGBT and
anti-parallel FRED in one package
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
RM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
GCE
TO-264 AA
(IXGK)
DS99044A(09/03)
PLUS247
(IXGX)
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600
= 75 A
= 2.5
= 35 ns
V
V
(TAB)
(TAB)
IXGK60N60C2D1
IXGX60N60C2D1
Advance Technical Data
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| IXGX60N60C2D1 | Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119) |
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| IXGN200N60B | HiPerFASTTM IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGK64N60B3D1 | 功能描述:IGBT 模塊 Mid-Frequency Range 15khz-40khz w/ Diode RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGK72N60A3H1 | 功能描述:IGBT 晶體管 75Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK72N60B3H1 | 功能描述:IGBT 模塊 Mid-Frequency Range 15khz-40khz w/ Diode RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGK72N60C3H1 | 功能描述:IGBT 晶體管 75Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK75N250 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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