- 您現在的位置：買賣IC網 > PDF目錄299231 > IXGQ28N120B (IXYS CORP) PDF資料下載
參數資料
| 型號： | IXGQ28N120B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 599K |
| 代理商： | IXGQ28N120B |
2003 IXYS All rights reserved
G = Gate
C = Collector
E = Emitter
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
1200
V
V
CGR
T
J
= 25
°C to 150°C; R
GE = 1 M
1200
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25°C50
A
I
C110
T
C = 110°C28
A
I
CM
T
C = 25°C, 1 ms
150
A
SSOA
V
GE = 15 V, TJ = 125°C, RG = 10
I
CM = 60
A
(RBSOA)
Clamped inductive load
@0.8 V
CES
P
C
T
C = 25°C
250
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C
= 250
A, V
CE = VGE
2.5
5.0
V
I
CES
V
CE = VCES
T
J =
25
°C
28N120B
25
A
V
GE = 0 V
28N120BD1
50
A
I
GES
V
CE = 0 V, VGE = ±20 V
±100
nA
V
CE(sat)
I
C
= 28A, V
GE = 15 V
2.9
3.5
V
Note 2
T=125
°C
2.8
Features
International standard package
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Advantages
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
DS99135(12/03)
High Voltage IGBT with Diode
IXGQ 28N120B
IXGQ 28N120BD1
V
CES
= 1200 V
I
C25
=50 A
V
CE(sat)
= 3.5 V
t
fi(typ)
= 160 ns
D1
TO-3P (IXGQ)
G
C
E
(TAB)
相關PDF資料 |
PDF描述 |
|---|---|
| IXSE503PC | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP24 |
| IXSE502PC | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
| J1MAWDD-26XP | POWER/SIGNAL RELAY, SPDT, MOMENTARY, 0.013A (COIL), 26.5VDC (COIL), 351mW (COIL), 1A (CONTACT), THROUGH HOLE-STRAIGHT MOUNT |
| J1MSCDD-26XP | POWER/SIGNAL RELAY, SPDT, MOMENTARY, 0.007A (COIL), 26.5VDC (COIL), 176mW (COIL), 1A (CONTACT), THROUGH HOLE-STRAIGHT MOUNT |
| J412TZM-5PL | RF RELAY, DPDT, MOMENTARY, 0.112A (COIL), 5VDC (COIL), 450mW (COIL), 1A (CONTACT), 28VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGQ28N120BD1 | 功能描述:IGBT 晶體管 28 Amps 1200 V 3.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGQ30N60C2D4 | 功能描述:IGBT 晶體管 G-series A2,B2,C2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGQ35N120BD1 | 功能描述:IGBT 晶體管 35 Amps 1200 V 3.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGQ50N100Y4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 50A I(C) |
| IXGQ50N50Y4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 500V V(BR)CES | 50A I(C) |
發布緊急采購，3分鐘左右您將得到回復。