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參數資料
| 型號： | IXGR50N60BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT ISOPLUS247 |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 573K |
| 代理商： | IXGR50N60BD1 |
2004 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
=
t
fi(typ)
= 600 V
=
75 A
2.5
V
=
85
ns
HiPerFAST
TM
IGBT
ISOPLUS247
TM
(Electrically Isolated Back Surface)
ISOPLUS 247
G = Gate,
E = Emitter
C = Collector
* Patent pending
E153432
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C110
I
CM
T
C
= 25
°
C
T
C
= 110
°
C
T
C
= 25
°
C, 1 ms
75
A
45
A
200
A
SSOA
(RBSOA)
V
= 15 V, T
= 125
°
C, R
= 10
Clamped inductive load, L = 100
μ
H
I
= 100
@ 0.8 V
CES
A
P
C
T
C
= 25
°
C
250
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS, t = 1minute leads-to-tab 2500
V
Weight
5
g
GCE
Isolated Backside*
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
V
GE(th)
I
C
I
C
= 250
μ
A, V
CE
= V
GE
= 500
μ
A
50N60B
50N60BD1
2.5
2.5
5.0
5.0
V
V
I
CES
V
CE
= 600V
V
GE
= 0 V
50N60B
50N60BD1
50N60B
50N60BD1
200
650
1
5
μ
A
μ
A
mA
mA
T
J
= 125
°
C
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
=
I
T
,
V
GE
= 15 V
2.5
V
Features
z
DCB Isolated mounting tab
z
Meets TO-247AD package Outline
z
High current handling capability
z
Latest generation HDMOS
TM
process
z
MOS Gate turn-on
- drive simplicity
Applications
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
Advantages
z
Easy assembly
z
High power density
z
Very fast switching speeds for high
frequency applications
IXGR 50N60B
IXGR 50N60BD1
(D1)
DS98730C(06/04)
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相關代理商/技術參數 |
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| IXGR50N60C2 | 功能描述:IGBT 晶體管 35 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGR50N60C2D1 | 功能描述:IGBT 晶體管 35 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGR50N90B2D1 | 功能描述:IGBT 晶體管 75 Amps 900V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGR55N120A3H1 | 功能描述:IGBT 模塊 High Frequency Range 40khz C-IGBT w/Diode RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGR60N60B2 | 功能描述:IGBT 晶體管 47 Amps 600V 1.8 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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