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參數(shù)資料
| 型號(hào)： | IXGT28N120B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage IGBT |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 583K |
| 代理商： | IXGT28N120B |
2004 IXYS All rights reserved
High Voltage IGBT
V
CES
= 1200 V
I
C25
= 50 A
V
CE(sat)
= 3.5 V
t
fi(typ)
= 160 ns
IXGH 28N120B
IXGT 28N120B
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
Features
z
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
Low switching losses, low V
(sat)
z
MOS Gate turn-on
- drive simplicity
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98987E(04/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A , V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1200
2.5
V
V
5
I
CES
V
CE
= V
CES
, V
GE
= 0 V
T
J
= 25
°
C
25
μ
A
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= 28A, V
GE
= 15 V
2.8
2.75
3.5
V
V
T
J
= 125
°
C
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1200
V
1200
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C110
I
CM
T
C
= 25
°
C
T
C
= 110
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 5
Clamped inductive load
50
A
28
A
150
A
SSOA
(RBSOA)
I
= 120
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
T
C
= 25
°
C
250
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°
C
260
°
C
M
d
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
C (TAB)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGT28N120BD1 | 功能描述:IGBT 晶體管 50 Amps 1200V 3.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N30 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N30A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N30B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N60B | 功能描述:IGBT 晶體管 40 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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