- 您現在的位置：買賣IC網 > PDF目錄383198 > IXGT30N60BU1 (IXYS CORP) HiPerFAST IGBT with Diode PDF資料下載
參數資料
| 型號： | IXGT30N60BU1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT with Diode |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | D3PAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 141K |
| 代理商： | IXGT30N60BU1 |
2002 IXYS All rights reserved
Features
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Optimized
V
and switching
speeds for medium frequency
applications
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
97501E (02/02)
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 60 A
= 1.8 V
= 100 ns
IXGH 30N60BU1
IXGT 30N60BU1
HiPerFAST
TM
IGBT
with Diode
Combi Pack
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 110
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 33
Clamped inductive load, L = 100
μ
H
60
30
A
A
A
120
I
= 60
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25
°
C
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
300
°
C
M
d
Weight
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
TO-268
TO-247 AD
4
6
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
BV
CES
temperature coefficient
I
C
= 250
μ
A, V
= V
V
GE(th)
temperature coefficient
V
CE
= 0.8 V
CES
V
GE
= 0 V
= 750
μ
A, V
= 0 V
600
V
0.072
%/K
V
GE(th)
2.5
5.5
V
-0.286
%/K
μ
A
mA
I
CES
T
J
= 25
°
C
T
J
= 150
°
C
500
3
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
V
CE(sat)
I
C
I
C
= I
C110
, V
GE
= 15 V
= I
C110
, V
GE
= 15 V
1.8
2.0
V
V
T
J
= 150
°
C
C (TAB)
TO-268
(IXGT)
G
E
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH30N60BD1 | HiPerFASTTM IGBT with Diode |
| IXGT30N60BD1 | HiPerFASTTM IGBT with Diode |
| IXGH30N60B | HiPerFASTTM IGBT |
| IXGH31N60D1 | Ultra-Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為1.7V的絕緣柵雙極晶體管(帶二極管)) |
| IXGH31N60U1 | Ultra-Low VCE(sat) IGBT with Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGT30N60C2 | 功能描述:IGBT 晶體管 30 Amps 600V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT30N60C2D1 | 功能描述:IGBT 晶體管 30 Amps 600V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT30N60C3D1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 600V IGBT with Diode |
| IXGT31N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Ultra-Low VCE(sat) IGBT |
| IXGT31N60D1 | 功能描述:IGBT 晶體管 60 Amps 600V 1.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。