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參數資料
| 型號： | IXKN40N60C |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CoolMOS Power MOSFET |
| 中文描述： | 40 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 117K |
| 代理商： | IXKN40N60C |
2000 IXYS All rights reserved
1 - 2
Symbol
Conditions
Maximum Ratings
V
DSS
T
J
= 25 C to 150 C
600
V
V
GS
20
V
I
D25
I
D90
T
C
= 25 C
T
C
= 90 C
40
27
A
A
E
AR
E
AS
I
D
= 20 A, L = 5 μH, T
= 25 C, repetitive
I
D
= 10 A, L = 36 mH, T
VJ
= 25 C, non repetitive
1
mJ
1.8
J
dv/dt
V
DS
V
DSS
, I
S
= 47 A, di
S
/dt = 100 A/μs, T
J
= T
JM
6
V/ns
P
D
T
C
= 25 C
290
W
T
J
T
JM
T
stg
-40 ... +150
C
C
C
150
-40 ... +150
V
ISOL
50/60 Hz, RMS I
ISOL
1 mA
2500
V~
M
d
Mounting torque
Terminal connetion torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
V
DSS
I
D25
R
DS(on)
600 V
40 A
70 m
CoolMOS
Power MOSFET
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
IXKN 40N60C
MOSFET
Symbol
Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
600
V
I
DSS
V
DS
= 0.8
V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
0.5
50
25
μA
μA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5
I
D25
70
m
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
3.5
5.5
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
Features
G
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
G
Fast CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
G
Enhanced total power density
Applications
G
Switched mode power supplies (SMPS)
G
Uninterruptible power supplies (UPS)
G
Power factor correction (PFC)
G
Welding
G
Inductive heating
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
G
S
D
S
miniBLOC, SOT-227 B
E72873
CoolMOS is a trademark of
Infineon Technologies AG.
Advanced Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXKN45N80C | 功能描述:MOSFET 45 Amps 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKN75N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:CoolMOS Power MOSFET |
| IXKN75N60C | 功能描述:MOSFET 75 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKP10N60C5 | 功能描述:MOSFET 10 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKP10N60C5M | 功能描述:MOSFET 10 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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