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參數資料
型號: IXR100
英文描述: IXR100 - DISCONTINUED PRODUCT. No longer recommended for new design.
中文描述: IXR100 -已停產產品。不再推薦用于新設計。
文件頁數: 7/14頁
文件大小: 138K
代理商: IXR100
IXR100
7
RFI AND TRANSIENT SUPPRESSION
Radio frequency interference and transients are a common
occurrence in 4-20mA loops, especially when long wiring
lengths are involved. RFI usually appears as a temporary
change in output and results from rectification of the radio
signal by one or more stages in the amplifier. For sensors
which are closely coupled to the IXR100 and are contained
in a common metal housing, the usual entry for RFI is via the
4-20mA loop wiring. Coaxial bypass capacitors may be used
with great effectiveness to bring these leads into the trans-
ducer housing while suppressing the RFI. Values of 100 to
1000pF are generally recommended. For sensors remote
from the IXR100, coaxial capacitors can also be used to
filter the excitation and signal leads. Additional low-pass
filtering at the IXR100 input helps suppress RFI. The easiest
way to do this is with the optional differential RC filter
shown in Figure 4. Typical values for R
1
and R
2
are
100-1000
, and for C
1
are 100-1000pF.
Transient suppression for negative voltages can be provided
by the reverse-polarity protection diodes discussed later.
However, positive transients cannot be handled by these
diodes and do frequently occur in field-mounted loops. A
shunt zener diode is of some help, but most zener diodes
suffer from limited current-handling capacity and slow turn-
on. Both of these characteristics can lead to device failure
before the zener conducts. One type of zener, called the
TRANZORB and available from General Semiconductor
Industries, is especially effective in protecting against high-
energy transients such as those induced by lightning or
motor contactors. Choose a TRANZORB with a voltage
rating close to, but exceeding, the maximum V
S
which the
IXR100 will see. In combination, the coaxial bypass capaci-
tors and TRANZORB provide a very high level of protec-
tion against transients and RFI.
INPUT BANDWIDTH LIMITING
Filtering at the input to the IXR100 is recommended where
possible and can be done as shown in Figure 4. C
1
connected
to pins 3 and 4 will reduce the bandwidth with a f
–3dB
frequency given by:
f
–3dB
= 0.159/(R
1
+ R
2
+ RTD + R
Z
) (C
1
+ 3pF)
This method has the disadvantage of having f
–3dB
vary with
R
1
, R
2
, RTD, and R
Z
may require large values of R
1
, and R
2
.
R
1
and R
2
should be matched to prevent zero errors due to
input bias current.
SIGNAL SUPPRESSION AND ELEVATION
In some applications it is desired to have suppressed zero
range (span elevation) or elevated zero range (span suppres-
sion). This is easily accomplished with the IXR100 by using
the current sources to create the suppression/elevation
voltage. The basic concept is shown in Figure 5. In this
example the sensor voltage is derived from RT (a thermistor,
RTD or other variable resistance element) excited by one of
the 0.4mA current sources. The other current source is used
to create the elevated zero range voltage. Figures 6a, 6b, 6c
and 6d show some of the possible circuit variations. These
circuits have the desirable feature of noninteractive span and
suppression/elevation adjustments.
NOTE: Use of the optional offset null (pins 10, 11, and 12)
for elevation or suppression is not recommended. This trim
technique is used only to trim the IXR100’s output offset
current.
MAJOR POINTS TO CONSIDER
WHEN USING THE IXR100
1. The leads to R
S
and R
LIN
should be kept as short as
possible to reduce noise pick-up and parasitic resistance.
If the linearity correction feature is not desired, the R
LIN
pins are left open.
2. +V
S
should be bypassed with a 0.01
μ
F capacitor as close
to the unit as possible (pins 18 to 28).
3. Always keep the input voltages within their range of
linear operation, +2V to +4V (
±
V
IN
measured with
respect to pin 5).
Figure 4. Optional Bandwidth-Limiting Circuitry.
Figure 5. Elevation and Suppression Graph.
0
i
0
20
15
10
5
0
+
Elevated
Zero
Range
Suppressed
Zero
Range
Span Adjust
V
IN
4
1
3
2
C
1
+
IXR100
5
0.4mA
R
1
R
2
R
Z
RTD
NOTE: (1) R and R should be made equal if used.
0.01μF
3.9k
(1)
(1)
0.4mA
7
6
S
9
8
LIN
R
R
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