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參數資料
| 型號： | IXSH15N120A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 36K |
| 代理商： | IXSH15N120A |
Preliminary Data Sheet
1996 IXYS Corporation. All rights reserved.
95586(7/96)
Symbol
(T
J
= 25°C unless otherwise specified)
Test Conditions
Characteristic Values
Min.
Typ. Max.
BV
CES
I
C
= 3.0 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 1.5 mA, V
CE
= V
GE
4
8
V
I
CES
V
= 0.8 V
CES
, V
GE
= 0 V
Note 2
T
J
= 25°C
T
J
= 125°C
200
μA
1 mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V
+ 100 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
V
I
C25
V
CES
V
CE(sat)
= 4.0 V
=
= 1200 V
30 A
IXSH15N120A
IGBT
"S" Series - Improved SCSOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 M
1200
1200
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
30
15
60
A
A
A
SSOA
(RBSOA)
V
GE
= 15 V, T
J
= 125°C, R
G
= 82
Clamped inductive load, L = 100 μH
I
CM
= 30
@ 0.8 V
CES
A
t
sc
T
J
= 125oC, V
CE
= 720 V; V
GE
= 15V, R
G
= 82
5
μs
P
C
T
C
= 25°C
150
W
T
J
T
JM
T
STG
-55 ... +150
°C
°C
°C
150
-55 ... +150
M
d
Mounting torque
.
1.15/10 Nm/lb-in.
Weight
6
g
Max. Lead Temperature for
Soldering
(1.6mm from case for 10s)
300
°C
Features
2
nd
generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
DC choppers
Advantages
Easy to mount (isolated mounting
hole)
Reduces assembly time and cost
G
E
C
TO-247AD
相關PDF資料 |
PDF描述 |
|---|---|
| IXSH15N120BD1 | S Series - Improved SCSOA Capability |
| IXST15N120BD1 | S Series - Improved SCSOA Capability |
| IXSH15N120AU1 | IGBT with Diode |
| IXSH15N120B | High Voltage IGBT(VCES為1200V，VCE(sat)為3.4V的高電壓絕緣柵雙極晶體管) |
| IXSH16N60U1 | Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為1.8V的絕緣柵雙極晶體管(帶二極管）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSH15N120AU1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Diode |
| IXSH15N120B | 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH15N120BD1 | 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH16N60U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 32A I(C) | TO-247AD |
| IXSH17N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-247AD |
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