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參數資料
| 型號： | IXSH30N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) High Speed IGBT(VCE(sat)為2.5V的高速絕緣柵雙極場效應管) |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 241K |
| 代理商： | IXSH30N60 |
1998 IXYS All rights reserved
TO-247 AD (IXSH)
V
CES
I
C25
V
CE(sat)
600 V
600 V
50 A
50 A
2.5 V
3.0 V
GCE
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 4.7
Clamped inductive load, L = 100
μ
H
50
A
30
A
100
A
I
= 60
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125
°
C
R
G
= 33
,
non repetitive
T
C
= 25
°
C
10
μ
s
P
C
T
J
T
JM
T
stg
M
d
Weight
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-204 AE (IXSM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l
International standard packages
l
Guaranteed Short Circuit SOA
capability
l
Low V
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Fast Fall Time for switching speeds
up to 20 kHz
Applications
l
AC motor speed control
l
Uninterruptible power supplies (UPS)
l
Welding
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
600
V
5
8
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
30N60
30N60A
2.5
3.0
V
V
91549H (9/98)
IXSH/IXSM
IXSH/IXSM
30N60
30N60A
Low V
CE(sat)
IGBT
High Speed IGBT
Short Circuit SOA Capability
相關PDF資料 |
PDF描述 |
|---|---|
| IXSH30N60A | Low VCE(sat) High Speed IGBT(VCE(sat)為3.0V的高速絕緣柵雙極場效應管) |
| IXSM30N60 | Low VCE(sat) IGBT, High Speed IGBT |
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| IXSH35N100A | High speed IGBT |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSH30N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSH30N60AU1 | 功能描述:IGBT 晶體管 30 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60B | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60B2D1 | 功能描述:IGBT 晶體管 30 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60BD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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