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參數資料
| 型號： | IXSH30N60C |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Speed IGBT |
| 中文描述： | 55 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 131K |
| 代理商： | IXSH30N60C |
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
55
A
30
A
110
A
V
GE
= 15 V, T
J
= 125
°
C, R
G
= 2.7
Clamped inductive load, V
CC
= 0.8 V
CES
I
CM
= 60
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
°
C
R
G
= 33
,
non repetitive
10
μ
s
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
= 250
μ
A, V
GE
= 0 V
600
V
I
C
= 2.5 mA, V
CE
= V
GE
4
7
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
V
GE
= 15 V; I
C
= I
C90
30N60B
30N60C
2.0
2.5
V
V
Features
International standard packages
Short Circuit SOA capability
High frequency IGBT
New generation HDMOS
TM
process
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Surface mountable, high power case
style
Reduce assembly time and cost
High power density
98519B (11/01)
G = Gate
S = Source
TAB = Drain
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
G
S
High Speed IGBT
Short Circuit SOA Capability
V
CES
600 V 2.0 V 140 ns
600 V 2.5 V 70 ns
I
CES
t
fi
IXSH/IXST 30N60B
IXSH/IXST 30N60C
相關PDF資料 |
PDF描述 |
|---|---|
| IXST30N60B | High Speed IGBT |
| IXST30N60C | High Speed IGBT |
| IXSH30N60CD1 | Short Circuit SOA Capability |
| IXSK30N60CD1 | Short Circuit SOA Capability |
| IXST30N60CD1 | Short Circuit SOA Capability |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSH30N60CD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60U1 | 功能描述:IGBT 晶體管 30 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH35N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD |
| IXSH35N100A | 功能描述:IGBT 晶體管 35 Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH35N120A | 功能描述:IGBT 晶體管 HIGH SPEED IGBT 1200V, 70A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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