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參數(shù)資料
| 型號： | IXSK50N60BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT with Diode(VCES為600V，VCE(sat)為2.5V的絕緣柵雙極晶體管(帶二極管）) |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-264 |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 100K |
| 代理商： | IXSK50N60BD1 |
1 - 5
2000 IXYS All rights reserved
TO-264 AA
(IXSK)
GCE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C, limited by leads
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
75
50
200
A
A
A
I
= 100
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
0.9/6
Nm/lb.in.
10
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
IGBT with Diode
V
CES
I
C25
V
CE(sat)
= 600 V
= 75 A
= 2.5 V
Short Circuit SOA Capability
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
350
A
5
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
; V
GE
= 15 V
2.2
2.5
V
Features
International standard package
JEDEC TO-264 AA, and hole-less
TO-247 package for clip mounting
Guaranteed Short Circuit SOA
capability
High frequency IGBT and anti-
parallel FRED in one package
Latest generation HDMOS
TM
process
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
98619 (4/99)
IXSK 50N60BD1
IXSX 50N60BD1
PLUS247
(IXSX)
GCE
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXSK50N60BU1 | IGBT with Diode(VCES為600V，VCE(sat)為2.5V的絕緣柵雙極晶體管(帶二極管）) |
| IXSK80N60B | High Current IGBT Short Circuit SOA Capability |
| IXSX80N60B | High Current IGBT Short Circuit SOA Capability |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSK50N60BU1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK80N60B | 功能描述:IGBT 晶體管 80 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSM17N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-204 |
| IXSM17N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-204 |
| IXSM20N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-204AE |
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