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參數資料
| 型號： | IXSX35N120AU1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage IGBT with Diode(VCES為1200V，VCE(sat)為4V的高電壓絕緣柵雙極晶體管(帶二極管）) |
| 中文描述： | 70 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | PLUS247, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 87K |
| 代理商： | IXSX35N120AU1 |
1 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
70
35
A
A
A
140
I
= 70
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 720 V, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
10
s
P
C
IGBT
Diode
300
190
W
W
T
J
T
JM
T
stg
T
L
Weight
-55 ... +150
C
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
TO-247 HL
6
g
Features
Hole-less TO-247 package for clip
mounting
High frequency IGBT and anti-parallel
FRED in one package
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
V
CES
I
C25
V
CE(SAT)
=
=
1200 V
=
70 A
4 V
97514D (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 5 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
1200
V
V
4
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
750
15
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4
V
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
PLUS TO-247
TM
(IXSX35N120AU1)
GCE
C (TAB)
High Voltage
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
IXSX 35N120AU1
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSX35N120AU1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 70A I(C) | TO-247SMD |
| IXSX35N120BD1 | 功能描述:IGBT 晶體管 70 Amps 1200V 3.6 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSX40N60BD1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSX40N60CD1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSX50N60AU1 | 功能描述:IGBT 75A 600V PLUS247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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