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參數資料
| 型號： | IXZ210N50L |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode Linear 175MHz RF MOSFET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 247K |
| 代理商： | IXZ210N50L |
IXZ210N50L & IXZ2210N50L
RF Power MOSFET
V
DSS
I
D25
=
=
500 V
10 A
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25°C to 150°C
500
V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M
500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
c
= 25°C
10
A
I
DM
T
c
= 25°C, pulse width limited by
T
JM
60
A
I
AR
T
c
= 25°C
16
A
E
AR
T
c
= 25°C
TBD
mJ
dv/dt
I
S
≤
I
DM
, di/dt
≤
100A/
μ
s, V
DD
≤
V
DSS
,
T
j
150°C, R
G
= 0.2
5
V/ns
I
S
= 0
>200
V/ns
P
DC
P
DHS
470 940
W
T
c
= 25°C, Derate 6.0W/°C above
25°C
235 470
W
P
DAMB
T
c
= 25°C
10 10
W
R
thJC
R
thJHS
0.32 0.16
C/W
0.57 0.29
C/W
IXZ210N50L IXZ2210N50L
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 4 ma
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μΑ
3.5
4.95
6.5
V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0
±100
nA
I
DSS
V
DS
= 0.8V
DSS
T
J
= 25C
V
GS
=0 T
J
=125C
50
1
μ
A
mA
R
DS(on)
V
GS
= 20 V, I
D
= 0.5I
D25
Pulse test, t
≤
300
μ
S, duty cycle d
≤
2%
1.0
g
fs
V
DS
= 50 V, I
D
= 0.5I
D25
, pulse test
3.8
S
T
J
-55
+175
°C
T
JM
+175
°C
T
stg
-55
+ 175
°C
T
L
1.6mm(0.063 in) from case for 10 s
300
°C
Weight
4
g
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS RF Low Capacitance Z-MOS
TM
Process
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
High Performance RF Package
Easy to mount—no insulators needed
(1) Thermal specifications are for the pack-
age, not per transistor
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOS
TM
MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
150V (operating)
300 & 550 Watts
175MHz
Note: All data is per the IXZ210N50L single ended device unless otherwise noted.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXZ210N50L_07 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:RF Power MOSFET |
| IXZ211N50 | 制造商:IXYS Corporation 功能描述:MOSFET N RF DE275 |
| IXZ-2150 | 制造商:InvenSense Inc 功能描述:Dual Axis (X/Z), full-scale-range from 250 to 2000 /sec, 3D Remote, Mice, Image Stabilization, Robotics, (T/R) |
| IXZ215N12L | 制造商:IXYS Corporation 功能描述:MOSFET N RF DE275 |
| IXZ2210N50L | 制造商:IXYS Corporation 功能描述:Trans RF MOSFET N-CH 500V 10A 8-Pin 制造商:IXYS Corporation 功能描述:MOSFET N RF 754 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, 754 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, 754, Transistor Type:RF MOSFET, Drain Source Voltage Vds:500V, Continuous Drain Current Id:10A, Power Dissipation Pd:360W, Operating Temperature Min:-55C, Operating Temperature Max:175C, RF Transistor Case:-, MSL:- , RoHS Compliant: Yes |
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