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參數資料
| 型號： | J13009 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor |
| 中文描述： | 高壓快速NPN電源開關晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 99K |
| 代理商： | J13009 |
2007 Fairchild Semiconductor Corporation
FJP13009 Rev. B
1
www.fairchildsemi.com
F
March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Mode Power Supply
Absolute Maximum Ratings*
T
C
= 25°C unless otherwise noted
(notes_1)
Symbol
Parameter
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
Value
Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
700
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
9
V
Collector Current (DC)
12
A
Collector Current (Pulse)
24
A
Base Current
6
A
Collector Dissipation (T
C
= 25
°
C)
Junction Temperature
100
W
150
°
C
Storage Temperature Range
-65 ~ 150
°
C
Device Item
(notes_2)
Device Marking
Package
Packing Method
Qty(pcs)
FJP13009
J13009
TO-220
Bulk
1,200
FJP13009H2TU
J130092
TO-220
TUBE
1,000
FJP13009TU
J13009
TO-220
TUBE
1,000
1.Base 2.Collector 3.Emitter
1
TO-220
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