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參數(shù)資料
| 型號(hào)： | J232 |
| 廠商： | InterFET Corporation |
| 英文描述： | N-Channel Silicon Junction Field-Effect Transistor |
| 中文描述： | N溝道硅結(jié)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 92K |
| 代理商： | J232 |
01/99
B-59
J232
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
360 mW
3.27 mW/°C
TOD226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ232
At 25°C free air temperature:
J232
Process NJ16
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
I
GSS
I
G
V
GS(OFF)
I
DSS
– 40
V
pA
pA
V
mA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
DS
= 20V, I
D
= V
V
DS
= 20V, I
D
= 1 μA
V
DS
= 20V, V
GS
= V
– 250
– 2
– 3
5
– 6
10
Dynamic Electrical Characteristics
Common Source Forward Transconductance
g
fs
Common Source Output Conductance
Common Source Input Capacitance
2500
5000
μS
μS
pF
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
f = 1 kHz
f = 1 kHz
f = 1 MHz
g
os
C
iss
5
4
Common Source Reverse Transfer
Capacitance
C
rss
1
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
ˉ
N
20
6
30
nV/
√
Hz
nV/
√
Hz
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
f = 10 Hz
f = 1 kHz
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FAX
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