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參數資料
| 型號： | J310 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel RF Amplifier(漏源電壓為25V的N溝道場效應管射頻放大器) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 561K |
| 代理商： | J310 |
J
Discrete POWE R & Signal
T echnologies
J309
J310
N-Channel RF Amplifier
This device is designed for VHF/UHF amplifier, oscillator and mixer
applications. As a common gate amplifier, 16 dB at 100 MHz and
12 dB at 450 MHz can be realized. Sourced from Process 92.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
MMBFJ309
MMBFJ310
Symbol
Parameter
Value
Units
V
DS
V
GS
I
GF
T
J
,T
stg
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
V
V
mA
°
C
-55 to +150
Symbol
Characteristic
Max
Units
J309 / J310
350
2.8
125
357
*MMBFJ309
225
1.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
556
SOT-23
Mark: 6U / 6T
G
S
D
GSD
TO-92
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| J-310 | 制造商:NTE Electronics 功能描述: |
| J310 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR JFET N TO-92 |
| J310_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier |
| J310_D26Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| J310_D26Z_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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