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| 型號(hào)： | JAN2N3227UB |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大小： | 103K |
| 代理商： | JAN2N3227UB |
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MIL-PRF-19500/512E
23 July 2001
SUPERSEDING
MIL-PRF-19500/512D
14 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND
JANKC2N4033 AND JANHC2N4033
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in
high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated
device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and
figure 5 (JANKC and JANHC) herein.
1.3 Maximum ratings.
PT (1)
TA = +25°C
PT (2)
TA = +25°C
PT (3)
TA = +25°C
PT (1)
TA = +25°C
VCBO
VCEO
VEBO
IC
TOP and TSTG
2N4029
2N4033
2N4033UA
2N4033UB
W
0.5
W
0.8
W
0.65
W
0.5
V dc
80
V dc
80
V dc
5.0
A dc
1.0
°C
-65 to +200
R
θJA
R
θJA
R
θJA
2N4029
2N4033UB
2N4033
2N4033UA
°C/W
325
°C/W
175
°C/W
210
(1) Derate linearly 3.08 mW/
°C above TA = +37.5°C.
(2) Derate linearly 5.7 mW/
°C above TA = +60°C.
(3) Derate linearly 4.76 mW/
°C above TA = +63.5°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN2N3250A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JAN2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JAN2N326 | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2A I(C) | TO-3VAR |
| JAN2N333 | TRANSISTOR | BJT | NPN | 25MA I(C) | TO-5 |
| JAN2N333A | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 25MA I(C) | TO-5 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N3250A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JAN2N3251A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JAN2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/323 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:500mV @ 5mA，50mA 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無(wú)引線 供應(yīng)商器件封裝:UB 標(biāo)準(zhǔn)包裝:1 |
| JAN2N326 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2A I(C) | TO-3VAR |
| JAN2N328A | 制造商: 功能描述: |
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