欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): JAN2N336
英文描述: TRANSISTOR | BJT | NPN | 25MA I(C) | TO-5
中文描述: 晶體管|晶體管|叩| 25mA電流一(c)|至5
文件頁(yè)數(shù): 1/19頁(yè)
文件大小: 103K
代理商: JAN2N336
MIL-PRF-19500/512E
23 July 2001
SUPERSEDING
MIL-PRF-19500/512D
14 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND
JANKC2N4033 AND JANHC2N4033
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in
high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated
device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and
figure 5 (JANKC and JANHC) herein.
1.3 Maximum ratings.
PT (1)
TA = +25°C
PT (2)
TA = +25°C
PT (3)
TA = +25°C
PT (1)
TA = +25°C
VCBO
VCEO
VEBO
IC
TOP and TSTG
2N4029
2N4033
2N4033UA
2N4033UB
W
0.5
W
0.8
W
0.65
W
0.5
V dc
80
V dc
80
V dc
5.0
A dc
1.0
°C
-65 to +200
R
θJA
R
θJA
R
θJA
2N4029
2N4033UB
2N4033
2N4033UA
°C/W
325
°C/W
175
°C/W
210
(1) Derate linearly 3.08 mW/
°C above TA = +37.5°C.
(2) Derate linearly 5.7 mW/
°C above TA = +60°C.
(3) Derate linearly 4.76 mW/
°C above TA = +63.5°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關(guān)PDF資料
PDF描述
JAN2N336A TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 25MA I(C) | TO-5
JAN2N336ALT2 BJT
JAN2N336AT2 BJT
JAN2N336LT2 BJT
JAN2N336T2 BJT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N336A 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 3PIN TO-5 - Bulk
JAN2N336ALT2 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
JAN2N336AT2 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
JAN2N336LT2 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
JAN2N336T2 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
主站蜘蛛池模板: 平塘县| 民丰县| 肇州县| 海兴县| 潞西市| 佛坪县| 信阳市| 黑龙江省| 张北县| 兴安盟| 宜川县| 凭祥市| 昆山市| 南皮县| 全南县| 武强县| 海盐县| 策勒县| 山西省| 冀州市| 巴彦淖尔市| 东山县| 拉萨市| 改则县| 阜宁县| 隆化县| 焉耆| 乐至县| 芜湖市| 古交市| 左云县| 千阳县| 阆中市| 黄龙县| 汤阴县| 乾安县| 绥中县| 武宣县| 扎赉特旗| 黔西| 杨浦区|