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參數資料
| 型號： | JAN2N3506 |
| 英文描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5 |
| 中文描述： | 晶體管|晶體管|叩| 40V的五（巴西）總裁| 3A條一（c）|至5 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 128K |
| 代理商： | JAN2N3506 |
MIL-PRF-19500/560E
6 March 2002
SUPERSEDING
MIL-PRF-19500/560D
3 January 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
TYPE 2N5339 AND 2N5339U3 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon switching transistors. Four
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two
levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-39), figures 2, 3, and 4 for JANHC and JANKC (die) and figure 5 for
U3 devices (TO-276AA) dimensions.
1.3 Maximum ratings.
Types
PT (1)
TA =
+25
°C
PT (2)
TC =
+25
°C
VCBO
VCEO
VEBO
IC
IB
TOP and TSTG
R
θJC
W
V dc
A dc
°C
°C/W
2N5339
2N5339U3
1.0
100
6.0
5.0
1.0
-65 to +200
17.5
12.5
(1) Derate linearly at 5.71 mW/
°C above T
A > +25°C.
(2) Derate linearly from 80 mW/
°C to 571 mW°C.
1.4
Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.)
Limits
hFE1 (1)
VCE = 2.0 V dc; IC = 0.5 A dc
hFE2 (1)
VCE = 2.0 V dc; IC = 2.0 A dc
hFE3 (1)
VCE = 2.0 V dc; IC = 5.0 A dc
Min
Max
60
240
40
(1) Pulsed (see 4.5.1).
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 June 2002.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
相關PDF資料 |
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|---|---|
| JAN2N3506A | BJT |
| JAN2N3506AL | BJT |
| JAN2N3506L | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5 |
| JAN2N3507 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-5 |
| JAN2N3507A | BJT |
相關代理商/技術參數 |
參數描述 |
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| JAN2N3506A | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JAN2N3506AL | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JAN2N3506L | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JAN2N3507 | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
| JAN2N3507A | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
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