欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: JAN2N652A
英文描述: TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
中文描述: 晶體管|晶體管|進步黨| 30V的五(巴西)總裁| 500mA的一(c)|至5
文件頁數: 1/19頁
文件大小: 103K
代理商: JAN2N652A
MIL-PRF-19500/512E
23 July 2001
SUPERSEDING
MIL-PRF-19500/512D
14 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND
JANKC2N4033 AND JANHC2N4033
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in
high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated
device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and
figure 5 (JANKC and JANHC) herein.
1.3 Maximum ratings.
PT (1)
TA = +25°C
PT (2)
TA = +25°C
PT (3)
TA = +25°C
PT (1)
TA = +25°C
VCBO
VCEO
VEBO
IC
TOP and TSTG
2N4029
2N4033
2N4033UA
2N4033UB
W
0.5
W
0.8
W
0.65
W
0.5
V dc
80
V dc
80
V dc
5.0
A dc
1.0
°C
-65 to +200
R
θJA
R
θJA
R
θJA
2N4029
2N4033UB
2N4033
2N4033UA
°C/W
325
°C/W
175
°C/W
210
(1) Derate linearly 3.08 mW/
°C above TA = +37.5°C.
(2) Derate linearly 5.7 mW/
°C above TA = +60°C.
(3) Derate linearly 4.76 mW/
°C above TA = +63.5°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料
PDF描述
JAN2N6648 TRANSISTOR | BJT | DARLINGTON | PNP | 40V V(BR)CEO | 10A I(C) | TO-204MA
JAN2N6649 TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
JAN2N665 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
JAN2N6650 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3
JAN2N6660 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-39
相關代理商/技術參數
參數描述
JAN2N6545 制造商:MOTOROLA 功能描述:2N6545
JAN2N6546 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk
JAN2N6547 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk
JAN2N657 制造商: 功能描述: 制造商:MILITARY SPECIFICATIONS P 功能描述:
JAN2N657S 制造商:Microsemi Corporation 功能描述:
主站蜘蛛池模板: 宁远县| 祁门县| 资溪县| 江山市| 巩义市| 绥宁县| 莎车县| 遂溪县| 永寿县| 海宁市| 民权县| 德江县| 阿拉尔市| 嘉善县| 榆中县| 琼海市| 柳林县| 德令哈市| 班戈县| 临朐县| 凤阳县| 钟山县| 建湖县| 同仁县| 阿荣旗| 嘉善县| 凤阳县| 淮阳县| 合川市| 疏附县| 江北区| 界首市| 岳西县| 天台县| 鄂尔多斯市| 宣恩县| 嘉义市| 武冈市| 遂平县| 屯留县| 教育|