欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: JAN2N6674
英文描述: TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 15A I(C) | TO-204AA
中文描述: 晶體管|晶體管|叩| 300V五(巴西)總裁|第15A一(c)|至204AA
文件頁數(shù): 1/21頁
文件大小: 137K
代理商: JAN2N6674
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料
PDF描述
JAN2N6675 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | TO-204AA
JAN2N6689 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 15A I(C) | TO-210AC
JAN2N6690 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | TO-210AC
JAN2N6756 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | TO-3
JAN2N6758 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-3
相關代理商/技術參數(shù)
參數(shù)描述
JAN2N6675 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 400V 15A 3-Pin(2+Tab) TO-3 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk 制造商:MOTOROLA 功能描述:5961011814826
JAN2N6676 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 15A 3PIN TO-3 - Bulk
JAN2N6676T1 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
JAN2N6678 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 400V 15A 3-Pin(2+Tab) TO-3 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 400V 15A 3PIN TO-3 - Bulk
JAN2N6678T1 制造商:Microsemi Corporation 功能描述:NPN DUAL TRANSISTOR 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
主站蜘蛛池模板: 车致| 五峰| 邹城市| 孝义市| 衡南县| 游戏| 宁南县| 德保县| 义马市| 葵青区| 华容县| 乐业县| 廊坊市| 东兴市| 康乐县| 安阳县| 泰州市| 永年县| 竹溪县| 泸西县| 惠水县| 攀枝花市| 黄龙县| 临清市| 清流县| 惠东县| 龙州县| 南雄市| 凌海市| 驻马店市| 黄冈市| 江山市| 宝丰县| 巩留县| 密山市| 财经| 汉源县| 绥德县| 碌曲县| 荣成市| 天水市|