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| 型號(hào)： | JAN2N6760 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | TO-3 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 5.5AI（四）|至3 |
| 文件頁(yè)數(shù)： | 1/23頁(yè) |
| 文件大小： | 135K |
| 代理商： | JAN2N6760 |
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MIL-PRF-19500/545D
27 July 2001
SUPERSEDING
MIL-PRF-19500/545C
21 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated
device type.
1.2 Physical dimensions. See figure 1 (similar to T0-205), figures 2, 3, and 4 (JANHC and JANKC), and
figure 5 (U3).
1.3 Maximum ratings.
Types
PT
TA = +25°C
PT
TC = +25°C
VCBO
VCEO
VEBO
IC
(1)
Reverse
pulse (2)
energy
Safe
operating
area
Tstg
and TJ
W
V dc
A dc
mj
°C
2N5151, L
2N5153, L
1 (3)
11.8 (4)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
2N5151U3
2N5153U3
1.16 (5)
100 (6)
100
80
5.5
2
10
15
See
figure 6
-65 to
+ 200
(1) This value applies for Pw
≤ 8.3 ms, duty cycle ≤ 1 percent.
(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy
test circuit of figure 7.
(3) Derate linearly 5.7 mW/
°C for TA > +25°C.
(4) Derate linearly 66.7 mW/
°C for TC > +25°C.
(5) Derate linearly 6.67 mW/
°C for T
A > +25°C.
(6) Derate linearly 571 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
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PDF描述 |
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| JAN2N6762 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-3 |
| JAN2N6764 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-3 |
| JAN2N6766 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-3 |
| JAN2N6768 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-3 |
| JAN2N720A | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-18 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N6762 | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JAN2N6764 | 制造商:Microsemi Corporation 功能描述:2N6764JAN - Bulk |
| JAN2N6764T1 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH TO-254AA |
| JAN2N6766 | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JAN2N6766T1 | 制造商:Microsemi Corporation 功能描述:2N6766T1JAN - Bulk |
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