欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: JAN2N7221
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-254AA
中文描述: 晶體管| MOSFET的| N溝道| 400V五(巴西)直| 10A條(丁)|對254AA
文件頁數: 1/21頁
文件大小: 137K
代理商: JAN2N7221
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料
PDF描述
JAN2N7236 30V N-Channel PowerTrench MOSFET
JAN2N7237 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254AA
JAN2N7368 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254
JAN2N7369 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-254
JAN2N7372 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA
相關代理商/技術參數
參數描述
JAN2N7224 制造商:Microsemi Corporation 功能描述:2N7224JAN - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET N-CH TO-254AA
JAN2N72241N6036 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036A 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036AE3 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036E3 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
主站蜘蛛池模板: 上思县| 湘潭县| 乌兰县| 南召县| 建瓯市| 丹凤县| 桓仁| 金沙县| 通江县| 曲松县| 那曲县| 蓬溪县| 开封市| 资溪县| 泰兴市| 尉犁县| 易门县| 沙坪坝区| 中山市| 登封市| 桑日县| 行唐县| 天长市| 锦屏县| 九龙城区| 阜阳市| 巴青县| 西昌市| 会东县| 屯昌县| 山阳县| 藁城市| 岢岚县| 西城区| 大余县| 寿阳县| 休宁县| 台南市| 恩施市| 黄石市| 隆化县|