欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: JANHC2N6212
英文描述: TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 2A I(C) | TO-66
中文描述: 晶體管|晶體管|進步黨| 300V五(巴西)總裁|甲一(c)|至66
文件頁數: 1/19頁
文件大小: 103K
代理商: JANHC2N6212
MIL-PRF-19500/512E
23 July 2001
SUPERSEDING
MIL-PRF-19500/512D
14 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND
JANKC2N4033 AND JANHC2N4033
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in
high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated
device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and
figure 5 (JANKC and JANHC) herein.
1.3 Maximum ratings.
PT (1)
TA = +25°C
PT (2)
TA = +25°C
PT (3)
TA = +25°C
PT (1)
TA = +25°C
VCBO
VCEO
VEBO
IC
TOP and TSTG
2N4029
2N4033
2N4033UA
2N4033UB
W
0.5
W
0.8
W
0.65
W
0.5
V dc
80
V dc
80
V dc
5.0
A dc
1.0
°C
-65 to +200
R
θJA
R
θJA
R
θJA
2N4029
2N4033UB
2N4033
2N4033UA
°C/W
325
°C/W
175
°C/W
210
(1) Derate linearly 3.08 mW/
°C above TA = +37.5°C.
(2) Derate linearly 5.7 mW/
°C above TA = +60°C.
(3) Derate linearly 4.76 mW/
°C above TA = +63.5°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關PDF資料
PDF描述
JANHC2N6213 TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-66
JANHCA2N5415 TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 1A I(C) | TO-39
JANHCA2N5416 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 1A I(C) | TO-39
JANHCA2N6796 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-39
JANS2N2369A TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18
相關代理商/技術參數
參數描述
JANHC2N6213 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-66
JANHC2N6249 制造商:Microsemi Corporation 功能描述:JANHC2N6249 - Bulk
JANHC2N6250 制造商:Microsemi Corporation 功能描述:JANHC2N6250 - Bulk
JANHC2N6251 制造商:Microsemi Corporation 功能描述:JANHC2N6251 - Bulk
JANHCA1N4148 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PERFORMANCE SPECIFICATION
主站蜘蛛池模板: 长葛市| 天门市| 宣威市| 闵行区| 中牟县| 秀山| 呼和浩特市| 鄂伦春自治旗| 荥经县| 益阳市| 蓬莱市| 乌兰察布市| 即墨市| 绥滨县| 白朗县| 米易县| 鹰潭市| 理塘县| 天门市| 永年县| 郯城县| 镶黄旗| 乐都县| 江西省| 同德县| 宁蒗| 新乡市| 岐山县| 轮台县| 岢岚县| 伊金霍洛旗| 东海县| 龙岩市| 余江县| 淮滨县| 汶上县| 邳州市| 冀州市| 酒泉市| 名山县| 界首市|