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參數資料
| 型號： | JANS2N7236U |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET SURFACE MOUNT (SMD-1) |
| 中文描述： | 功率MOSFET表面貼裝系統（SMD - 1） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 174K |
| 代理商： | JANS2N7236U |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-18
-11
-72
125
1.0
±20
500
-18
12.5
-5.0
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 S)
2.6(typical)
g
PD - 91553F
o
C
A
09/22/03
www.irf.com
1
SMD-1
Product Summary
Part Number R
DS(on)
I
D
IRFN9140 0.20
-18A
For footnotes refer to the last page
HEXFET
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Surface Mount
Dynamic dv/dt Rating
Light-weight
POWER MOSFET
SURFACE MOUNT(SMD-1)
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
REF:MIL-PRF-19500/595
100V, P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
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